Full PDF Text Transcription for TSM120N06LCP (Reference)
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TSM120N06LCP Taiwan Semiconductor N-Channel Power MOSFET 60V, 70A, 12mΩ FEATURES ● Low RDS(ON) to minimize conductive losses ● Logic level ● Low gate charge for fast powe...
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nimize conductive losses ● Logic level ● Low gate charge for fast power switching ● 100% UIS and Rg tested ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT RDS(on) (max) VDS VGS = 10V VGS = 4.
TSM120N06LCP Datasheet
