TSM12N02 - 20V N-Channel MOSFET

Taiwan Semiconductor

General Description

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Key Features

Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram.

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TSM12N02 20v n-channel mosfet by Taiwan Semiconductor - Datasheet Preview

Datasheet Details

Part number	TSM12N02
Manufacturer	Taiwan Semiconductor
File Size	362.70 KB
Description	20V N-Channel MOSFET
Datasheet	TSM12N02 Datasheet

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TSM12N02 20V N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 20 30 @ VGS = 10V 40 @ VGS = 4.5V TO-252 Pin Definition: 1. Gate 2. Drain 3. Source ID (A) 8 6 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● Load Switch PA Switch Ordering Information Part No. TSM12N02CP RO Package TO-252 Packing T&R N-Channel MOSFET Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.