TSM12N65 Description
The TSM12N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
TSM12N65 Key Features
- Low RDS(ON) 0.68Ω (Typ.) Low gate charge typical @ 41nC (Typ.) Low Crss typical @ 14.6pF (Typ.) Fast Switching