Datasheet Summary
Taiwan Semiconductor
N-Channel Power MOSFET
60V, 70A, 12mΩ
Features
- Low RDS(ON) to minimize conductive losses
- Logic level
- Low gate charge for fast power switching
- 100% UIS and Rg tested
- pliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE UNIT
RDS(on) (max)
VDS VGS = 10V VGS = 4.5V
Qg
60 12 15 18
V mΩ nC
APPLICATIONS
- BLDC Motor Control
- Battery Power Management
- Secondary Synchronous Rectification
TO-252(DPAK)
Notes: MSL 3 (Moisture Sensitivity Level) per...