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TSM120N06LCP
Taiwan Semiconductor
N-Channel Power MOSFET
60V, 70A, 12mΩ
FEATURES
● Low RDS(ON) to minimize conductive losses ● Logic level ● Low gate charge for fast power switching
● 100% UIS and Rg tested ● Compliant to RoHS directive 2011/65/EU and in
accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE UNIT
RDS(on) (max)
VDS VGS = 10V VGS = 4.
TSM120N06LCP Datasheet
