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TSM1N60L Datasheet 600V N-Channel Power MOSFET

Manufacturer: Taiwan Semiconductor

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General Description

The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.

The new energy efficient design also offers a drain- to-source diode with a fast recovery time.

Overview

TSM1N60L 600V N-Channel Power MOSFET TO-252 TO-251 Pin Definition: 1.

Gate 2.

Drain 3.

Key Features

  • Robust high voltage termination.
  • Avalanche energy specified.
  • Diode is characterized for use in bridge circuits.
  • Source to.

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