Datasheet4U Logo Datasheet4U.com

TSM1N60 Datasheet N-channel Power Enhancement Mode MOSFET

Manufacturer: Taiwan Semiconductor

Overview: .. TSM1N60 N-Channel Power Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Drain 3. Source VDS = 600V ID = 1A RDS (on), Vgs @ 10V, Ids @ 0.

General Description

The TSM1N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

In addition, this advanced MOSFET is designed to withstand high energy in avalanche and mutation modes.

The new energy efficient design also offers a drain- to-source diode with a fast recovery time.

Key Features

  • — Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits — Source to Drain diode recovery time comparable to a discrete fast recovery diode. IDSS and VDS(on) specified at elevated temperature — — — Block Diagram Ordering Information Part No. TSM1N60CP TSM1N60CH Packing Tape & Reel Tube Package TO-252 TO-251 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Cur.

More Datasheets from Taiwan Semiconductor

Part Number Description
TSM1N60L 600V N-Channel Power MOSFET
TSM1N60S 600V N-Channel Power MOSFET
TSM1N50 500V N-Channel Power MOSFET
TSM1N80 N-Channel Power MOSFET
TSM1NB60 N-Channel Power MOSFET
TSM1NB60CP N-Channel Power MOSFET
TSM1NB60LCW N-Channel Power MOSFET
TSM1NB60S 600V N-Channel Power MOSFET
TSM100N06 60V N-Channel Power MOSFET
TSM10N80 800V N-Channel Power MOSFET

TSM1N60 Distributor