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TSM1N60 - N-Channel Power Enhancement Mode MOSFET

General Description

The TSM1N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.

Key Features

  • — Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits — Source to Drain diode recovery time comparable to a discrete fast recovery diode. IDSS and VDS(on) specified at elevated temperature — — — Block Diagram Ordering Information Part No. TSM1N60CP TSM1N60CH Packing Tape & Reel Tube Package TO-252 TO-251 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Cur.

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www.DataSheet4U.com TSM1N60 N-Channel Power Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Drain 3. Source VDS = 600V ID = 1A RDS (on), Vgs @ 10V, Ids @ 0.6A = 8Ω General Description The TSM1N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time.