Datasheet Details
| Part number | TSM1N60L |
|---|---|
| Manufacturer | Taiwan Semiconductor |
| File Size | 399.36 KB |
| Description | 600V N-Channel Power MOSFET |
| Datasheet | TSM1N60L_TaiwanSemiconductor.pdf |
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Overview: TSM1N60L 600V N-Channel Power MOSFET TO-252 TO-251 Pin Definition: 1. Gate 2. Drain 3.
| Part number | TSM1N60L |
|---|---|
| Manufacturer | Taiwan Semiconductor |
| File Size | 399.36 KB |
| Description | 600V N-Channel Power MOSFET |
| Datasheet | TSM1N60L_TaiwanSemiconductor.pdf |
|
|
|
The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.
In addition, this advanced MOSFET is designed to withstand high energy in avalanche and mutation modes.
The new energy efficient design also offers a drain- to-source diode with a fast recovery time.
| Part Number | Description |
|---|---|
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| TSM1NB60CP | N-Channel Power MOSFET |
| TSM1NB60LCW | N-Channel Power MOSFET |
| TSM1NB60S | 600V N-Channel Power MOSFET |
| TSM100N06 | 60V N-Channel Power MOSFET |
| TSM10N80 | 800V N-Channel Power MOSFET |