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TSM2611ED - 20V Dual N-Channel MOSFET

General Description

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Key Features

  • Advance Trench Process Technology High Density Cell Design for Ultra Low On resistance ESD Protected HBM 2KV Block Diagram.

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TSM2611ED 20V Dual N-Channel MOSFET w/ESD Protected SOT-26 Pin Definition: 1. Source 1 6. Gate 1 2. Drain 1 5. Drain 2 3. Source 2 4. Gate 2 PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 20 @ VGS = 4.5V 20 28 @ VGS = 2.5V ID (A) 6 5 Features ● ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On resistance ESD Protected HBM 2KV Block Diagram Application ● ● Portable Applications Battery Management Ordering Information Part No. TSM2611EDCX6 RFG Package SOT-26 Packing 3Kpcs / 7” Reel ` Dual N-Channel MOSFET Note: “G” denotes Halogen Free Product.