Datasheet4U Logo Datasheet4U.com

TSM20N50CN - 500V N-Channel Power MOSFET

Datasheet Summary

Description

The TSM20N50CN N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • Low RDS(ON) 0.3Ω (Max. ) Low gate charge typical @ 54nC (Typ. ) Improve dv/dt capability Block Diagram Ordering Information Part No. TSM20N50CN C0 Package TO-3PN Packing 30pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(TC=25℃) Pulsed Drain Current.
  • Peak Diode Recovery dv/dt (Note 3) Single Pulse Avalanche Energy (Note 2) Avalanche Current (Repetitive) (No.

📥 Download Datasheet

Datasheet preview – TSM20N50CN

Datasheet Details

Part number TSM20N50CN
Manufacturer Taiwan Semiconductor
File Size 499.21 KB
Description 500V N-Channel Power MOSFET
Datasheet download datasheet TSM20N50CN Datasheet
Additional preview pages of the TSM20N50CN datasheet.

📁 Similar Datasheet

  • TSM200 - Surface Mount Devices (SPSEMI)
  • TSM221 - DUAL CMOS RAIL TO RAIL OPERATIONAL AMPLIFIER AND DUAL CMOS COMPARATOR (STMicroelectronics)
  • TSM2301 - 20V P-Channel Enhancement Mode MOSFET (Taiwan Semiconductor Company)
  • TSM2301B - 20V P-Channel MOSFET (Taiwan Semiconductor Company)
  • TSM2302 - 20V N-Channel Enhancement Mode MOSFET (Taiwan Semiconductor Company)
  • TSM2306 - 30V N-Channel MOSFET (Taiwan Semiconductor Company)
  • TSM2307 - 30V P-Channel MOSFET (Taiwan Semiconductor Company)
  • TSM2308CX - N-Channel 60V MOSFET (VBsemi)
  • TSM2310 - 20V N-Channel MOSFET (Taiwan Semiconductor Company)
  • TSM2311 - 20V P-Channel Enhancement Mode MOSFET (Taiwan Semiconductor Company)
Other Datasheets by Taiwan Semiconductor

Full PDF Text Transcription

Click to expand full text
TSM20N50CN 500V N-Channel Power MOSFET TO-3PN Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 500 RDS(on)(mΩ) 0.3 @ VGS =10V ID (A) 20 General Description The TSM20N50CN N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge. Features ● ● ● Low RDS(ON) 0.3Ω (Max.) Low gate charge typical @ 54nC (Typ.) Improve dv/dt capability Block Diagram Ordering Information Part No.
Published: |