TSM220NB06CR - N-Channel Power MOSFET

Taiwan Semiconductor

Key Features

Low RDS(ON) to minimize conductive losses.
Low gate charge for fast power switching.
100% UIS and Rg tested.
175°C Operating junction temperature.
RoHS Compliant.
Halogen-free KEY.

TSM220NB06CR n-channel power mosfet by Taiwan Semiconductor - Datasheet Preview

Datasheet Details

Part number	TSM220NB06CR
Manufacturer	Taiwan Semiconductor
File Size	325.81 KB
Description	N-Channel Power MOSFET
Datasheet	TSM220NB06CR Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
TSM221	DUAL CMOS RAIL TO RAIL OPERATIONAL AMPLIFIER AND DUAL CMOS COMPARATOR	STMicroelectronics
TSM200	Surface Mount Devices	SPSEMI
TSM2301	20V P-Channel Enhancement Mode MOSFET	Taiwan Semiconductor Company
TSM2301B	20V P-Channel MOSFET	Taiwan Semiconductor Company
TSM2302	20V N-Channel Enhancement Mode MOSFET	Taiwan Semiconductor Company

Other Datasheets by Taiwan Semiconductor

Part Number	Description
TSM200N03D	Dual N-Channel MOSFET
TSM20N50	500V N-Channel Power MOSFET
TSM20N50CN	500V N-Channel Power MOSFET
TSM210N02CX	N-Channel Power MOSFET
TSM210N06	N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

TSM220NB06CR Taiwan Semiconductor N-Channel Power MOSFET 60V, 35A, 22mΩ FEATURES ● Low RDS(ON) to minimize conductive losses ● Low gate charge for fast power switching ● 100% UIS and Rg tested.