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TSM210N06 - N-Channel Power MOSFET

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Description

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Features

  • Advanced Trench Technology.
  • Low RDS(ON) 3.1mΩ (Max. ).
  • Low gate charge typical @ 160nC (Typ. ).
  • Low Crss typical @ 300pF (Typ. ) Ordering Information Part No. TSM210N06CZ C0 Package TO-220 Packing 50pcs / Tube Block Diagram N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current TC=70°C TA=25°C ID TA=70°C Drain Current-Pulsed Note 1 IDM Ava.

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Datasheet Details

Part number TSM210N06
Manufacturer Taiwan Semiconductor
File Size 56.56 KB
Description N-Channel Power MOSFET
Datasheet download datasheet TSM210N06 Datasheet
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Full PDF Text Transcription

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TO-220 Pin Definition: 1. Gate 2. Drain 3. Source TSM210N06 60V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 60 3.1 @ VGS =10V ID (A) 210 Features ● Advanced Trench Technology ● Low RDS(ON) 3.1mΩ (Max.) ● Low gate charge typical @ 160nC (Typ.) ● Low Crss typical @ 300pF (Typ.) Ordering Information Part No. TSM210N06CZ C0 Package TO-220 Packing 50pcs / Tube Block Diagram N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current TC=70°C TA=25°C ID TA=70°C Drain Current-Pulsed Note 1 IDM Avalanche Current, L=0.3mH IAS, IAR Avalanche Energy, L=0.
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