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TSM2NB60 - 600V N-Channel Power MOSFET

Features

  • Advanced planar process.
  • 100% avalanche tested.
  • Pb-free plating.
  • Compliant to RoHS Directive 2011/65/EU and in accordance to WEE 2002/96/EC.
  • Halogen-free according to IEC 61249-2-21 definition KEY.

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TSM2NB60 Taiwan Semiconductor N-Channel Power MOSFET 600V, 2A, 4.4Ω FEATURES ● Advanced planar process ● 100% avalanche tested ● Pb-free plating ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 definition KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) 600 V 4.4 Ω Qg 9.
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