TSM2NB60
TSM2NB60 is 600V N-Channel Power MOSFET manufactured by Taiwan Semiconductor.
FEATURES
- Advanced planar process
- 100% avalanche tested
- Pb-free plating
- pliant to Ro HS Directive 2011/65/EU and in accordance to WEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
VDS RDS(on) (max)
600 V 4.4 Ω
Qg 9.4 n C
APPLICATION
- Power Supply
- Lighting
TO-220
ITO-220
TO-251(IPAK)
TO-252(DPAK)
Not TRSec Mo T2Sm NMBm2e60Nnd BCe6Zd0CI
Notes: MSL 3 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
LIMIT SYMBOL
IPAK/DPAK ITO-220
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2)
TC = 25°C TC = 100°C
Single Pulsed Avalanche Energy (Note 3)
Single Pulsed Avalanche Current (Note 3)
Repetitive Avalanche Energy(Note 2)
Peak Diode Recovery dv/dt(Note 4)
VDS VGS
IDM EAS IAS EAR dv/dt
600...
