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TSM4435B - 30V P-Channel MOSFET

General Description

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Key Features

  • Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram.

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Full PDF Text Transcription (Reference)

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TSM4435B 30V P-Channel MOSFET SOP-8 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) -30 21 @ VGS = -10V 35 @ VGS = -4.5V ID (A) -9.1 -6.9 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● DC-DC Conversion Battery Switch Ordering Information Part No. TSM4435BCS RL Package SOP-8 Packing 2.5Kpcs / 13” Reel P-Channel MOSFET TSM4435BCS RLG SOP-8 2.