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TSM4435 - 30V P-Channel MOSFET

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Key Features

  • Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram.

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Datasheet Details

Part number TSM4435
Manufacturer Taiwan Semiconductor Company
File Size 381.55 KB
Description 30V P-Channel MOSFET
Datasheet download datasheet TSM4435 Datasheet

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www.DataSheet4U.com TSM4435 30V P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) -30 21 @ VGS = -10V 35 @ VGS = -4.5V SOP-8 Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain ID (A) -9.1 -6.9 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● DC-DC Conversion Battery Switch P-Channel MOSFET Ordering Information Part No. TSM4435CS RL Package SOP-8 Packing 2.