Click to expand full text
TSM4436
Taiwan Semiconductor
N-Channel Power MOSFET
60V, 8A, 36mΩ
FEATURES
● Advance trench process technology ● High density cell design for ultra low on-
resistance ● RoHS Compliant ● Halogen-free
APPLICATIONS
● High-Side DC/DC conversion ● Notebook ● Industrial
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE UNIT
VDS
60
V
VGS = 10V
36
RDS(on) (max)
mΩ
VGS = 4.5V
43
Qg
10
nC
SOP-8
Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
±20
Continuous Drain Current
TC= 25°C
ID
8
Pulsed Drain Current
IDM
25
Single Pulse Avalanche Current (Note 1)
IAS
12
Single Pulse Avalanche Energy (Note 1)
EAS
22.
TSM4436 Datasheet
