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TSM9ND50CI - N-Channel Power MOSFET

Key Features

  • 100% UIS and Rg tested.
  • Advanced planar process.
  • Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC.
  • Halogen-free according to IEC 61249-2-21 KEY.

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TSM9ND50CI Taiwan Semiconductor N-Channel Power MOSFET 500V, 9A, 0.9Ω FEATURES ● 100% UIS and Rg tested ● Advanced planar process ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 500 V RDS(on) (max) 0.9 Ω Qg 24.5 nC APPLICATIONS ● Power Supply ● AC/DC LED Lighting ITO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage VDS 500 VGS ±30 Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) Total Power Dissipation @ TC = 25°C Single Pulse Avalanche Energy (Note 3) Single Pulse Avalanche Current (Note 3) TC = 25°C TC = 100°C ID IDM PDTOT EAS IAS 9 5.