TSM9ND50CI Datasheet | Taiwan Semiconductor

FEATURES - 100% UIS and Rg tested - Advanced planar process - pliant to Ro HS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT RDS(on) (max) Ω Qg 24.5 n C APPLICATIONS - Power Supply - AC/DC LED Lighting ITO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage ±30 Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) Total Power Dissipation @ TC = 25°C Single Pulse Avalanche Energy (Note 3) Single Pulse Avalanche Current (Note 3) TC = 25°C TC = 100°C IDM PDTOT EAS 9 5.7 36 50 302.5 5.5 Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +150 UNIT V V A A A W m J A °C THERMAL PERFORMANCE PARAMETER SYMBOL...