The TDM3426B uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
| Part number | TDM3426B |
|---|---|
| Manufacturer | Techcode |
| File Size | 353.40 KB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet |
 TDM3426B Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| TDM300 | Twin Diode Module | Microsemi Corporation |
| TDM30002 | Twin Diode Module | Microsemi Corporation |
| TDM30004 | Twin Diode Module | Microsemi Corporation |
| TDM30006 | Twin Diode Module | Microsemi Corporation |
| TDM30008 | Twin Diode Module | Microsemi Corporation |
| Part Number | Description |
|---|---|
| TDM3426 | N-Channel Enhancement Mode MOSFET |
| TDM3421 | P-Channel Enhancement Mode MOSFET |
| TDM3424 | N-Channel Enhancement Mode MOSFET |
| TDM3428 | N-Channel Enhancement Mode MOSFET |
| TDM3404 | N-Channel Enhancement Mode MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
