Techcode TDM3426
The TDM3426 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.| Part No. | TDM3426 |
|---|---|
| Datasheet | TDM3426 Download |
| Manufacturer |  Techcode |
| Description | N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
GENERAL FEATURES
● RDS(ON) < 9.8mΩ @ VGS=4.5V RDS(ON) < 7.2mΩ @ VGS=10V● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package Application
● PWM applications
● Load switch
● Power management
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Parameter Symbol Drain‐Source Voltage VDS Gate‐Source Voltage Drain Current @ Continuous(Note 2) VGS ID（25℃） ID（100℃） Drain Current @ Current‐Pulsed (Note 1) Maximum Power Dissipation (TA=25℃) IDM PD Operating Junction and Storage Temperature Range TJ,TSTG THERMAL CHARACTERISTICS Thermal Resistance,Junction‐to‐Ambient (Note 2) RθJA DATASHEET TDM3426 Limit 30 +20 15 12 60 3.5 ‐55 To 150 35 Unit V V A A A W ℃ ℃/W November 18, 2014 Techcode Semiconductor Limited 1 T echcode® N-Channel Enhancement Mode MOSFETELECTRICAL CHARACTERISTICS
(TA=25℃unless otherwise noted) DATASHEET TDM3426 Parameter Symbol Condition Min OFF CHARACTERISTICS Drain‐Source Breakdown Voltage BVDSS VGS=0V ID=250μA 30 Zer...
