Techcode TDM3426B
The TDM3426B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.| Part No. | TDM3426B |
|---|---|
| Datasheet | TDM3426B Download |
| Manufacturer |  Techcode |
| Description | N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
GENERAL FEATURES
● RDS(ON) < 16mΩ @ VGS=4.5V RDS(ON) < 10mΩ @ VGS=10V● High Power and current handling capability
● Lead free product is available
● Surface Mount Package Application
● PWM applications
● Load switch
● Power management DATASHEET TDM3426B
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Parameter Symbol Drain‐Source Voltage VDS Gate‐Source Voltage VGS Diode Continuous Forward Current Is(TC=25℃) Continuous Drain Current (Note 1) ID（TC=25℃） Pulse Drain Current Tested IDM（TA=25℃） Maximum Power Dissipation PD(TC=25℃) Maximum Power Dissipation PD（TA=25℃） PD（TA=70℃） Thermal Resistance,Junction‐to‐Ambient(t<10s) RθJA Maximum Operating Junction Temperature TJ Storage Temperature Range NOTES: TSTG 1. Max continuous current is limited by bonding wire. Limit 30 +20 5 18 36 20 3.5 2.2 35 150 ‐55 To 150 Unit V V A A A W W W ℃/W ℃ ℃ May 24, 2016 Techcode Semiconductor Limited 1 T echcode® N-Channel Enhancement Mode MOSFETELECTRICAL CHARACTERISTICS
(TA=25℃unless oth...
