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TDM3458 - N-Channel Enhancement Mode MOSFET

Description

The TDM3458 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Features

  • RDS(ON) < 8.7mΩ @ VGS=4.5V RDS(ON) < 5.5mΩ @ VGS=10V.
  • High Power and current handling capability.
  • Lead free product is available.
  • ESD protection.
  • Surface Mount Package.

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Datasheet Details

Part number TDM3458
Manufacturer Techcode
File Size 357.30 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet TDM3458 Datasheet

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Full PDF Text Transcription

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Techcode® N-Channel Enhancement Mode MOSFET DESCRIPTION The TDM3458 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES  RDS(ON) < 8.7mΩ @ VGS=4.5V RDS(ON) < 5.
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