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SMD10P05 Datasheet Preview

SMD10P05 Datasheet

P-Channel Enhancement Mode Transistors

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SMD/SMU10P05
P-Channel Enhancement-Mode Transistors
Product Summary
V(BR)DSS (V)
–50
rDS(on) (W)
0.28
TO-252
Drain Connected to Tab
IDa (A)
–10
TO-251
S
G
GD S
Top View
Order Number: SMD10P05
GD S
Top View
Order Number: SMU10P05
D
P-Channel MOSFET
Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currentb
TA = 25_C
TA = 100_C
Pulsed Drain Current (maximum current limited by package)
Power Dissipation
Operating Junction and Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
TC = 25_C
TA = 25_C
VDS
VGS
ID
IDM
PD
TJ, Tstg
TL
–50
"20
–2.0
–1.3
–16
40
2.0b
–55 to 150
300
V
A
W
_C
Thermal Resistance Ratings
Parameter
Symbol
Typical
Maximum Unit
Junction-to-Ambient Free Air, PC Board Mountb
Junction-to-Ambient Free Air, Vertical Mount
RthJA
50
50
60
60 _C/W
Junction-to-Case
RthJC
2.3
3.0
Notes:
a. Calculated Rating for TC = 25_C, for comparison purposes only. This cannot be used as continuous rating (see Absolute Maximum Ratings
and Typical Characteristics).
b. Surface mounted on PC board or mounted vertically in free air.
Siliconix
P-36851—Rev. D, 06-Jun-94
1




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SMD10P05 Datasheet Preview

SMD10P05 Datasheet

P-Channel Enhancement Mode Transistors

No Preview Available !

SMD/SMU10P05
Specifications (TJ = 25_C Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamic
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = –250 mA
VDS = VGS, ID = –250 mA
VDS = 0 V, VGS = "20 V
VDS = –40 V, VGS = 0 V
VDS = –40 V, VGS = 0 V, TJ = 125_C
VDS = –5 V, VGS = –10 V
VGS = –10 V, ID = –5 A
VGS = –10 V, ID = –5 A, TJ = 125_C
VDS = –15 V, ID = –5 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = –25 V, f = 1 MHz
VDS = –25 V, VGS = –10 V, ID =– 10 A
VDD = –30 V, RL = 3 W
ID ] –10 A, VGEN = –10 V, RG = 25 W
Source-Drain Diode Ratings and Characteristics
Continuous Current
Pulsed Current
Forward Voltageb
Reverse Recovery Time
Reverse Recovery Charge
IS
ISM
VSD
trr
Qrr
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
IF = –2 A, VGS = 0 V
IF = –2 A, dlF/dt = 100 A/ms
Min Typa Max Unit
–50
V
–2.0 –4.0
"100 nA
–25
–250
mA
–10 A
0.25 0.28
0.4 0.50
W
1.0 3
S
530
325 pF
85
13 20
3.6 5.0 nC
9 12.0
10 30
50 95
ns
25 90
50 75
–2.0
A
–24
–2.3 V
70 ns
0.07 mC
2 Siliconix
P-36851—Rev. D, 06-Jun-94


Part Number SMD10P05
Description P-Channel Enhancement Mode Transistors
Maker Temic
Total Page 4 Pages
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