900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Temic

SMD10P06 Datasheet Preview

SMD10P06 Datasheet

P-Channel Enhancement-Mode Transistor

No Preview Available !

SMD10P06
P-Channel Enhancement-Mode Transistor
Product Summary
V(BR)DSS (V)
–60
rDS(on) (W)
0.28 @ VGS = 10 V
TO-252
IDa (A)
"10
S
G
Drain Connected to Tab
GD S
Top View
Order Number:
SMD10P06
D
P-Channel MOSFET
Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currentb
TC = 25_C
TC = 100_C
Pulsed Drain Current (maximum current limited by package)
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25_C
TA = 25_C
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
–60
"20
–10
–5.7
–16
–2.0
42
2.0b
–55 to 175
Unit
V
A
W
_C
Thermal Resistance Ratings
Parameter
Symbol
Limit
Unit
Junction-to-Ambient Free Airb
Junction-to-Case
RthJA
RthJC
60
_C/W
3.0
Notes:
a. Calculated Rating for TC = 25_C, for comparison purposes only. This cannot be used as continuous rating (see Absolute Maximum Ratings
and Typical Characteristics).
b. Surface Mounted on FR4 Board, t v 10 sec.
Subsequent updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document
#1480.
Siliconix
S-46848—Rev. B, 26-Feb-96
1




Temic

SMD10P06 Datasheet Preview

SMD10P06 Datasheet

P-Channel Enhancement-Mode Transistor

No Preview Available !

SMD10P06
Specifications (TJ = 25_C Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = –10 mA
VDS = VGS, ID = –10 mA
VDS = 0 V, VGS = "20 V
VDS = –60 V, VGS = 0 V
VDS = –60 V, VGS = 0 V, TJ = 125_C
VDS = –60 V, VGS = 0 V, TJ = 175_C
VDS = –5 V, VGS = –10 V
VGS = –10 V, ID = –3.0 A
VGS = –10 V, ID = –3.0 A, TJ = 125_C
VDS = –10 V, ID = –5.7 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = –25 V, f = 1 MHz
VDS = –30 V, VGS = –10 V, ID = –10 A
VDD = –30 V, RL = 3 W
ID ^ –10 A, VGEN = –10 V, RG = 25 W
Source-Drain Diode Ratings and Characteristics
Pulsed Current
Forward Voltageb
Reverse Recovery Time
Reverse Recovery Charge
ISM
VSD IF = –10 A, VGS = 0 V
trr IF = –10 A, di/dt = 100 A/ms
Qrr
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
Min
–60
–2.0
–10
2.3
Typa Max Unit
–4.0
"100
–1
–50
–150
0.28
0.46
V
nA
mA
A
W
S
550 1000
130 pF
110
13 24
3 6 nC
48
10 20
30 60
ns
38 70
20 40
–16 A
–1.2 V
60 ns
0.15 mC
2 Siliconix
S-46848—Rev. B, 26-Feb-96


Part Number SMD10P06
Description P-Channel Enhancement-Mode Transistor
Maker Temic
Total Page 4 Pages
PDF Download

SMD10P06 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 SMD10P05 P-Channel Enhancement Mode Transistors
Temic
2 SMD10P06 P-Channel Enhancement-Mode Transistor
Temic
3 SMD10P06L P-Channel Enhancement-Mode Transistor
Temic





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy