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Thinki Semiconductor

F50UP30DN Datasheet Preview

F50UP30DN Datasheet

Common Cathode Fast Recovery Epitaxial Diode

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F50UP30DN
®
F50UP30DN
Pb
Pb Free Plating Product
50.0 Ampere,300 Volt Common Cathode Fast Recovery Epitaxial Diode
APPLICATION
· Freewheeling, Snubber, Clamp
· Inversion Welder
· PFC
· Plating Power Supply
· Ultrasonic Cleaner and Welder
· Converter & Chopper
· UPS
TO-3PB/TO-3PN
Cathode(Bottom Side Metal Heatsink)
PRODUCT FEATURE
· Ultrafast Recovery Time
· Soft Recovery Characteristics
· Low Recovery Loss
· Low Forward Voltage
· High Surge Current Capability
· Low Leakage Current
Internal Configuration
Base Backside
Anode
Cathode
Anode
GENERAL DESCRIPTION
F50UP30DN using matured FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Values
Unit
VR
VRRM
Maximum D.C. Reverse Voltage
Maximum Repetitive Reverse Voltage
300 V
300 V
IF(AV)
Average Forward Current
TC=110°C, Per Diode
TC=110°C, Per Package
30 A
60 A
IF(RMS)
IFSM
RMS Forward Current
Non-Repetitive Surge Forward Current
TC=110°C, Per Diode
TJ=45°C, t=10ms, 50Hz, Sine
42
480
A
A
PD Power Dissipation
TJ Junction Temperature
156
-55to +150
W
°C
TSTG
Storage Temperature Range
-55 to +150
°C
Torque Module-to-Sink
RecommendedM3
1.1 N·m
Rth(J-C) Thermal Resistance
Junction-to-Case, Per Diode
0.8 °C /W
Weight
6g
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
Symbol
Parameter
IRM Reverse Leakage Current
Test Conditions
VR=300V
VR=300V, TJ=125°C
Min.
--
--
Typ.
--
--
Max.
10
10
Unit
µA
mA
VF Forward Voltage
IF=30A
IF=30A, TJ=125°C
-- 1.25 1.8
-- 1.12 --
V
V
trr Reverse Recovery Time
IF=1A, VR=30V, diF/dt=-200A/μs -- 22 --
ns
trr Reverse Recovery Time
VR=150V, IF=30A
-- 35 --
ns
IRRM Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=25°C
-- 2.5 --
A
trr Reverse Recovery Time
VR=150V, IF=30A
IRRM Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=125°C
-- 70 --
-- 6.8 --
ns
A
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/3
http://www.thinkisemi.com/




Thinki Semiconductor

F50UP30DN Datasheet Preview

F50UP30DN Datasheet

Common Cathode Fast Recovery Epitaxial Diode

No Preview Available !

F50UP30DN
®
60
50
40
TJ =125°C
30
20
TJ =25°C
10
00 0.3 0.6 0.9 1.2 1.5 1.8
VFV
Fig1. Forward Voltage Drop vs Forward Current
24
VR=150V
20 TJ =125°C
16
IF=60A
12 IF=30A
IF=15A
8
4
00 200 400 600 800 1000
diF/dtA/μs
Fig3. Reverse Recovery Current vs diF/dt
1.2
1
0.8
0.6
trr
0.4 IRRM
0.2 Qrr
00 25 50 75 100 125 150
TJ (°C)
Fig5. Dynamic Parameters vs Junction Temperature
100
80
IF=60A
VR=150V
TJ =125°C
60
IF=30A
40 IF=15A
20
00 200 400 600 800 1000
diF/dtA/μs
Fig2. Reverse Recovery Time vs diF/dt
600
VR=150V
500 TJ =125°C
400
300
200
IF=60A
IF=30A
IF=15A
100
00 200 400 600 800 1000
diF/dtA/μs
Fig4. Reverse Recovery Charge vs diF/dt
10
1
10-1
10-2
Duty
0.5
0.2
0.1
0.05
Single Pulse
10-310-4
10-3
10-2
10-1
1
Rectangular Pulse Duration (seconds)
Fig6. Transient Thermal Impedance
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 2/3
http://www.thinkisemi.com/


Part Number F50UP30DN
Description Common Cathode Fast Recovery Epitaxial Diode
Maker Thinki Semiconductor
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