IRF740PBF Key Features
- RDS(on) (Max 0.55 Ω )@VGS=10V
- Gate Charge (Typical 48nC)
- Improved dv/dt Capability
- High ruggedness
- 100% Avalanche Tested
- Part: IRF740PBF
- Manufacturer: Thinki Semiconductor
- Size: 899.88 KB
Other IRF740PBF Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
International Rectifier |
IRF740PBF | Power MOSFET |
|
International Rectifier |
IRF740 | Power MOSFET |
STMicroelectronics |
IRF740 | N-channel MOSFET |
Vishay |
IRF740 | Power MOSFET |
Inchange Semiconductor |
IRF740 | N-Channel MOSFET Transistor |
IRF740PBF Description
This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220C pkg is well suited for adaptor power unit and small power inverter application.