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IRF740 - N-Channel MOSFET Transistor

Key Features

  • Drain Source Voltage- : VDSS= 400V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 0.55Ω(Max).
  • Fast Switching Speed.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.55Ω(Max) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switch mode power supply ·Uninterruptable power supply ·High speed power switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 400 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 10 A IDM Drain Current-Single Plused 40 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max.