Datasheet Summary
PD- 94024A
HEXFET® Power MOSFET l l l l
Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel
VDSS
-30V
RDS(on) max (mΩ)
13.5@VGS = -10V 22@VGS = -4.5V
-11A -8.8A
Description
These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements,...
