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IRF7424PBF - Power MOSFET

General Description

achieve the extremely low on-resistance per silicon S 3 area.

Key Features

  • formation.10/04 www. irf. com 9.

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Other Datasheets by International Rectifier (now Infineon)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Lead-Free VDSS -30V PD- 95343 IRF7424PbF HEXFET® Power MOSFET RDS(on) max (mW) 13.5@VGS = -10V 22@VGS = -4.5V ID -11A -8.8A Description S1 A 8D These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to S 2 7D achieve the extremely low on-resistance per silicon S 3 area. This benefit provides the designer with an extremely efficient device for use in battery and load G 4 6D 5D management applications.. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.