Datasheet Summary
l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Lead-Free
VDSS
-30V
PD- 95343
HEXFET® Power MOSFET
RDS(on) max (mW)
13.5@VGS = -10V 22@VGS = -4.5V
-11A
-8.8A
Description
S1
A 8D
These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to
7D achieve the extremely low on-resistance per silicon S 3 area. This benefit provides the designer with an extremely efficient device for use in battery and load G 4
6D 5D management applications..
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety...
