IRF740A
IRF740A is Power MOSFET manufactured by Vishay.
FEATURES
- Low gate charge Qg results in simple drive requirement
- Improved gate, avalanche, and dynamic d V/dt Available ruggedness
- Fully characterized capacitance and avalanche voltage and current
- Effective Coss specified
- Material categorization: for definitions of pliance please see .vishay./doc?99912
Note
- This datasheet provides information about parts that are
Ro HS-pliant and / or parts that are non Ro HS-pliant. For example, parts with lead (Pb) terminations are not Ro HS-pliant. Please see the information / tables in this datasheet for details
APPLICATIONS
- Switch mode power supply (SMPS)
- Uninterruptable power supply
- High speed power switching
TYPICAL SMPS TOPOLOGIES
- Single transistor flyback Xfmr. reset
- Single transistor forward Xfmr. reset (both for US line input only)
TO-220AB IRF740APb F IRF740APb F-BE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source voltage
Continuous drain current
Pulsed drain current a Linear derating factor Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Peak diode recovery d V/dt c
VGS at 10 V
TC = 25 °C TC = 100 °C
TC = 25 °C
VDS VGS
EAS IAR EAR PD d V/dt
Operating junction and storage temperature range Soldering remendations (peak temperature) d
For 10 s
TJ, Tstg
Mounting torque
6-32 or M3 screw
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 50 V, starting TJ = 25 °C, L = 12.6 m H, Rg = 25 Ω, IAS = 10 A (see fig. 12) c. ISD ≤ 10 A, d V/dt ≤ 330 A/μs, VDD ≤ VDS, TJ ≤ 150 °C d. 1.6 mm from case
LIMIT 400 ± 30 10 6.3 40 1.0 630 10 12.5 125 5.9
- 55 to + 150 300d 10...
