IRF740A Datasheet | International Rectifier

PD- 92004 SMPS MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching HEXFET® Power MOSFET VDSS Rds(on) max ID 400V 0.55Ω 10A Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss specified ( See AN 1001) TO-220AB G D S Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt - Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 10 6.3 40 125 1.0 ± 30 5.9 -55 to + 150 300 (1.6mm from case ) 10 lbf- in (1.1N- m) Units W W/°C V V/ns °C Typical SMPS Topologies: l Single transistor Flyback Xfmr. Reset l Single Transistor Forward Xfmr. Reset ( Both for US Line Input only ) Notes  through … are on page 8 .irf. 9/14/99 Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) VGS(th) Static Drain-to-Source On-Resistance Gate Threshold Voltage IDSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage IGSS Gate-to-Source Reverse...