IRF740APBF Datasheet | International Rectifier

PD- 94828 SMPS MOSFET Applications Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l Lead-Free l IRF740APb F HEXFET® Power MOSFET VDSS 400V Rds(on) max 0.55Ω 10A Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss specified ( See AN 1001) l TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt - Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 10 6.3 40 125 1.0 ± 30 5.9 -55 to + 150 300 (1.6mm from case ) 10 lbf- in (1.1N- m) Units A W W/°C V V/ns °C Typical SMPS Topologies: l l Single transistor Flyback Xfmr. Reset Single Transistor Forward Xfmr. Reset ( Both for US Line Input only ) through … are on page 8 Notes  .irf. 11/10/03 .. .. .. IRF740APb F Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 400 - - - - - - 2.0 - - - - - - -...