IRF7459 Description
20 ± 12 12 10 100 2.5 1.6 0.02 -55 to + 150 Units V V A W W W/°C °C Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient Typ. 20 50 Units °C/W Notes through are on page 8 .irf. 1 3/25/01 IRF7459 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
IRF7459 Key Features
- High Frequency DC-DC Isolated Converters with Synchronous Rectification for Tele and Industrial use
- IRF7459 HEXFET® Power MOSFET VDSS 20V RDS(on) max 9.0mΩ ID 12A High Frequency Buck Converters for puter Pr
- Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current S S S