IRF7459PbF Description
1 4/17/06 IRF7459PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 20 ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. 290 12 Units mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge trr Reverse...
IRF7459PbF Key Features
- High Frequency DC-DC Isolated Converters with Synchronous Rectification for Tele and Industrial use
- High Frequency Buck Converters for puter Processor Power
- Lead-Free HEXFET® Power MOSFET VDSS 20V RDS(on) max ID 9.0mΩ 12A Benefits
- Ultra-Low Gate Impedance
- Very Low RDS(on) at 4.5V VGS