IRF7453PbF
SMPS MOSFET
Applications l High frequency DC-DC converters l Lead-Free
VDSS 250V
PD- 95307
IRF7453Pb F
HEXFET® Power MOSFET
RDS(on) max
0.23W@VGS = 10V 2.2A
Benefits l Low Gate to Drain Charge to Reduce
Switching Losses
S l Fully Characterized Capacitance Including S
Effective COSS to Simplify Design (See App. Note AN1001)
S l Fully Characterized Avalanche Voltage G and Current
18 27 36 45
Top View
AA D D D D
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C
VGS dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation- Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max. 2.2 1.7 17 2.5 0.02 ± 30 13
-55 to + 150
300 (1.6mm from case )
Units
W W/°C
V V/ns
°C
Thermal Resistance
Symbol
RθJL RθJA
Parameter Junction-to-Drain Lead...
