Click to expand full text
PD- 93897C
SMPS MOSFET
Applications High frequency DC-DC converters
IRF7452
HEXFET® Power MOSFET
VDSS
100V
RDS(on) max
0.060Ω
ID
4.5A
Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current
S S S G
1
8 7
A A D D D D
2
3
6
4
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
4.5 3.
IRF7452 Datasheet
