ch square copper board. as Coss while VDS is rising from 0 to 80% VDSS. Starting TJ = 25°C, L = 33mH,
RG = 25Ω, IAS = 3.6A.
ISD ≤ 2.2A, di/dt ≤ 180A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD.
Full PDF Text Transcription for IRF7451 (Reference)
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PD- 93898A
SMPS MOSFET
Applications l High frequency DC-DC converters
IRF7451
HEXFET® Power MOSFET
VDSS
150V
RDS(on) max
0.09Ω
ID
3.6A
Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.
IRF7451 Datasheet
