IRF7451 - Power MOSFET

Features

ch square copper board. as Coss while VDS is rising from 0 to 80% VDSS. Starting TJ = 25°C, L = 33mH, RG = 25Ω, IAS = 3.6A.
ISD ≤ 2.2A, di/dt ≤ 180A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD.

International Rectifier

Datasheet Details

Part number	IRF7451
Manufacturer	International Rectifier
File Size	209.16 KB
Description	Power MOSFET
Datasheet	IRF7451 Datasheet
Additional preview pages of the IRF7451 datasheet.

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Full PDF Text Transcription

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PD- 93898A SMPS MOSFET Applications l High frequency DC-DC converters IRF7451 HEXFET® Power MOSFET VDSS 150V RDS(on) max 0.09Ω ID 3.6A Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.

Published: Apr 16, 2005 |