d capacitance that gives the same charging time When mounted on 1 inch square copper board. as Coss while VDS is rising from 0 to 80% VDSS. Starting TJ = 25°C, L = 33mH,
RG = 25Ω, IAS = 3.6A.
ISD ≤ 2.2A, di/dt ≤ 180A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. IR WORLD.
Full PDF Text Transcription for IRF7451PBF (Reference)
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PD- 95725
SMPS MOSFET
Applications l High frequency DC-DC converters l Lead-Free
IRF7451PbF
HEXFET® Power MOSFET
VDSS
150V
RDS(on) max
0.09W
ID
3.6A
Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
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S S S G
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8 7
A A D D D D
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Top View
SO-8
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IRF7451PBF Datasheet
