IRF7451PBF
PD- 95725
SMPS MOSFET
Applications l High frequency DC-DC converters l Lead-Free
IRF7451Pb F
HEXFET® Power MOSFET
VDSS
150V
RDS(on) max
0.09W
3.6A
Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l
8 7
A A D D D D
Top View
SO-8
..
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt
- Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
3.6 2.9 29 2.5 0.02 ± 30 7.9 -55 to + 150 300 (1.6mm from case )
Units
A W W/°C V V/ns °C
Thermal Resistance
Symbol
RθJL RθJA
Parameter
Junction-to-Drain Lead Junction-to-Ambien...
