IRF7470 Description
40 ± 12 10 8.5 85 2.5 1.6 0.02 -55 to + 150 Units V V A W W W/°C °C Typ. 20 50 Units °C/W 1 8/11/04 IRF7470PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 40 ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
IRF7470 Key Features
- High Frequency DC-DC Converters with Synchronous Rectification
- Lead-Free HEXFET® Power MOSFET VDSS RDS(on) max ID 40V 13mΩ 10A Benefits
- Ultra-Low Gate Impedance
- Very Low RDS(on) at 4.5V VGS
- Fully Characterized Avalanche Voltage and Current S 1 S 2 S 3 G 4 AA 8 D 7 D 6 D 5 D Top Vie