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IRF7470PBF - Power MOSFET

Key Features

  • Ω, IAS = 8.0A. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. IR WORLD.

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Other Datasheets by International Rectifier (now Infineon)

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IRF7470 Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD- 95276 SMPS MOSFET Applications l High Frequency DC-DC Converters with Synchronous Rectification l Lead-Free Benefits l l l IRF7470PbF HEXFET® Power MOSFET VDSS 40V RDS(on) max 13mΩ ID 10A Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current S S S G 1 8 7 A A D D D D 2 3 6 4 5 Top View www.DataSheet4U.com SO-8 Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Junction and Storage Temperature Range Max. 40 ± 12 10 8.5 85 2.5 1.6 0.