IRF7471PbF Description
40 ± 20 10 8.3 83 2.5 1.6 0.02 -55 to + 150 Units V V A W W mW/°C °C Typ. 20 50 Units °C/W 1 8/11/04 IRF7471PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 40 ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
IRF7471PbF Key Features
- High Frequency Isolated DC-DC Converters with Synchronous Rectification for Tele and Industrial Use
- High Frequency Buck Converters for puter Processor Power VDSS 40V
- Lead-Free IRF7471PbF HEXFET® Power MOSFET RDS(on) max 13mΩ ID 10A Benefits
- Ultra-Low Gate Impedance
- Very Low RDS(on)