IRF7471 Description
40 ± 20 10 8.3 83 2.5 1.6 0.02 -55 to + 150 Units V V A W W mW/°C °C Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient Typ. 20 50 Units °C/W Notes through are on page 8 .irf. 1 3/25/01 IRF7471 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
IRF7471 Key Features
- High Frequency Isolated DC-DC Converters with Synchronous Rectification for Tele and Industrial Use
- High Frequency Buck Converters for puter Processor Power Benefits
- Ultra-Low Gate Impedance
- Very Low RDS(on)
- Fully Characterized Avalanche Voltage and Current IRF7471 HEXFET® Power MOSFET VDSS 40V RDS(on) max 13mΩ I