IRFP460PBF Key Features
- RDS(on) (Max 0.24 Ω )@VGS=10V
- Gate Charge (Typical 130nC)
- Improved dv/dt Capability
- High ruggedness
- 100% Avalanche Tested
- Part: IRFP460PBF
- Manufacturer: Thinki Semiconductor
- Size: 1.23 MB
Other IRFP460PBF Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
International Rectifier |
IRFP460PBF | Power MOSFET |
|
International Rectifier |
IRFP460P | Power MOSFET |
Inchange Semiconductor |
IRFP460 | N-Channel MOSFET Transistor |
Fairchild |
IRFP460 | Power MOSFET |
|
International Rectifier |
IRFP460 | Power MOSFET |
IRFP460PBF Description
This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-3PB pkg is well suited for adaptor power unit and small power inverter application.