XP162A12A6PR-G mosfet equivalent, power mosfet.
Low On-State Resistance : Rds(on)=0.17Ω@Vgs=-4.5V
: Rds(on)=0.3ΩVgs=-2.5V
Ultra High-Speed Switching
Driving Voltage
: -2.5V
Gate Protect Diode Built-in
P-Channel .
*Notebook PCs
*Cellular and portable phones
*On-board power supplies
*Li-ion battery systems
*FEATU.
The XP162A12A6PR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in .
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