XP162A12A6PR Datasheet | Torex Semiconductor

P-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.17 Ω (max) Ultra High-Speed Switching Gate Protect Diode Built-in SOT - 89 Package Applications Notebook PCs Cellular and portable phones On - board power supplies Li - ion battery systems General Description The XP162A12A6PR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-89 package makes high density mounting possible. Features Low on-state resistance : Rds (on) = 0.17 Ω ( Vgs = -4.5V ) Rds...