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XP162A12A6PR Datasheet Power MOSFET

Manufacturer: Torex Semiconductor

Overview: P-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.

General Description

The XP162A12A6PR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

In order to counter static, a gate protect diode is built-in.

Key Features

  • Low on-state resistance : Rds (on) = 0.17 Ω ( Vgs = -4.5V ) Rds (on) = 0.3 Ω ( Vgs = -2.5V ) Ultra high-speed switching Operational Voltage : -2.5V Gate protect diode built-in High density mounting : SOT - 89 u Pin Configuration Pin Assignment PIN NUMBER 1 2 3 PIN NAME G D S.

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