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XP162A12A6PR-G - Power MOSFET

General Description

The XP162A12A6PR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

A gate protect diode is built-in to prevent static damage.

Key Features

  • Low On-State Resistance : Rds(on)=0.17Ω@Vgs=-4.5V : Rds(on)=0.3ΩVgs=-2.5V Ultra High-Speed Switching Driving Voltage : -2.5V Gate Protect Diode Built-in P-Channel Power MOSFET DMOS Structure Package : SOT-89 21 2x.
  • PIN.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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XP162A12A6PR-G Power MOSFET ETR11026-004 ■GENERAL DESCRIPTION The XP162A12A6PR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible. ■APPLICATIONS ●Notebook PCs ●Cellular and portable phones ●On-board power supplies ●Li-ion battery systems ■FEATURES Low On-State Resistance : Rds(on)=0.17Ω@Vgs=-4.5V : Rds(on)=0.3ΩVgs=-2.5V Ultra High-Speed Switching Driving Voltage : -2.