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XP133A1235SR - Power MOSFET

Description

The XP133A1235SR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.

Two FET devices are built into the one package Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

Features

  • Low On-State Resistance : Rds(on)=0.035Ω(Vgs= 4.5V) : Rds(on)=0.048Ω(Vgs = 2.5V) Ultra High-Speed Switching Driving Voltage : 2.5V N-Channel Power MOSFET DMOS Structure Two FET Devices Built-in Package : SOP-8.
  • PIN.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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XP133A1235SR Power MOSFET ETR1112_001 ■GENERAL DESCRIPTION The XP133A1235SR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Two FET devices are built into the one package Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible. ■APPLICATIONS ●Notebook PCs ●Cellular and portable phones ●On-board power supplies ●Li-ion battery systems ■FEATURES Low On-State Resistance : Rds(on)=0.035Ω(Vgs= 4.5V) : Rds(on)=0.048Ω(Vgs = 2.5V) Ultra High-Speed Switching Driving Voltage : 2.
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