The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
NN-Channel Power MOS FET NDMOS Structure NLow On-State Resistance: 0.026Ω (max) NUltra High-Speed Switching NSOP-8 Package
GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems
The XP131A0526SR is an N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible.
Low on-state resistance : Rds(on)=0.017Ω (Vgs=10V) : Rds(on)=0.026Ω (Vgs=4.5V)
Ultra high-speed switching Operational Voltage : 4.
XP131A0526SR Datasheet
