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XP131A0616SR - Power MOS FET

General Description

The XP131A0616SR is a N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

The small SOP-8 package makes high density mounting possible.

Key Features

  • Low on-state resistance: Rds(on)=0.016Ω(Vgs=4.5V) Rds(on)=0.022Ω(Vgs=2.5V) Rds(on)=0.045Ω(Vgs=1.5V) Ultra high-speed switching Operational Voltage: 1.5V High density mounting: SOP-8 Pin Configuration S1 S2 S3 G4 SOP-8 (TOP VIEW) 8D 7D 6D 5D Equivalent Circuit 18 27 36 45 N-Channel MOS FET (1 device built-in) Pin Assignment PIN NUMBER PIN NAME 1~3 S 4G 5~8 D.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel Power MOS FET DMOS Structure Low On-State Resistance: 0.016Ω MAX Ultra High-Speed Switching SOP-8 Package Applications Notebook PCs Cellular and portable phones On-board power supplies Li-ion battery systems General Description The XP131A0616SR is a N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible. Features Low on-state resistance: Rds(on)=0.016Ω(Vgs=4.5V) Rds(on)=0.022Ω(Vgs=2.5V) Rds(on)=0.045Ω(Vgs=1.5V) Ultra high-speed switching Operational Voltage: 1.