XP152A12C0MR-G fet equivalent, power mos fet.
Low On-State Resistance : Rds(on) = 0.3Ω@ Vgs = -4.5V
: Rds(on) = 0.5Ω@ Vgs = -2.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage
: -2.5V
.
*Notebook PCs
*Cellular and portable phones
*On-board power supplies
*Li-ion battery systems
*FEATU.
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