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XP152A12C0MR-G - POWER MOS FET

This page provides the datasheet information for the XP152A12C0MR-G, a member of the XP152A12C0MR POWER MOS FET family.

Datasheet Summary

Description

The XP152A12C0MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

In order to counter static, a gate protect diode is built-in.

Features

  • Low On-State Resistance : Rds(on) = 0.3Ω@ Vgs = -4.5V : Rds(on) = 0.5Ω@ Vgs = -2.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : -2.5V P-Channel Power MOSFET DMOS Structure Small Package : SOT-23 Environmentally Friendly : EU RoHS Compliant, Pb Free.
  • PIN.

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Datasheet preview – XP152A12C0MR-G

Datasheet Details

Part number XP152A12C0MR-G
Manufacturer Torex Semiconductor
File Size 307.17 KB
Description POWER MOS FET
Datasheet download datasheet XP152A12C0MR-G Datasheet
Additional preview pages of the XP152A12C0MR-G datasheet.

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Full PDF Text Transcription

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XP152A12C0MR-G Power MOSFET ETR1121_003 ■GENERAL DESCRIPTION The XP152A12C0MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible. ■APPLICATIONS ●Notebook PCs ●Cellular and portable phones ●On-board power supplies ●Li-ion battery systems ■FEATURES Low On-State Resistance : Rds(on) = 0.3Ω@ Vgs = -4.5V : Rds(on) = 0.5Ω@ Vgs = -2.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : -2.
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