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1SS413CT Datasheet Schottky Barrier Diode

Manufacturer: Toshiba

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Overview

Schottky Barrier Diode Silicon Epitaxial 1SS413CT 1.

Applications • High-Speed Switching 2.

Key Features

  • (1) Low forward voltage : VF(3) = 0.50 V (typ. ) (2) Low reverse current : IR = 0.5 µA (max) (3) Small total capacitance : Ct = 3.9 pF (typ. ) 3. Packaging and Internal Circuit 1SS413CT CST2 1: Cathode 2: Anode 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 25 V Reverse voltage VR 20 Peak forward current IFM 100 mA Average rectified current IO 50 mA Power dissipation PD (Note 1) 100 mW.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
SEMTECH Logo 1SS413 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE SEMTECH

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