Semtech Corporation 1SS413
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
| Part No. | 1SS413 |
|---|---|
| Datasheet | 1SS413 Download |
| Manufacturer |  Semtech Corporation |
| Description | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |
| Buy | Stock & Price |
DESCRIPTION
Cathode Anode 12 Q Top View Marking Code: "Q" Simplified outline SOD-523 and symbolABSOLUTE MAXIMUM RATINGS
(Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Peak Forward Current Average Forward Current Surge Current (10 ms) Power Dissipation Junction Temperature Storage Temperature Symbol VRM VR IFM IO IFSM Ptot TJ Ts Value 25 20 100 50 1 100 125 - 55 to + 125 Unit V V mA mA A mW OC OC Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 50 mA Reverse Current at VR = 20 V Total Capacitance at VR = 0 V, f = 1 MHz Symbol VF IR CT Typ. - 3.9 Max. 0.55 0.5 - Unit V µA pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 23/11/2006 A C 1SS413 PACKAGE OUTLINE Plastic surface mounted package; 2 leads ∠ ALL ROUND HE D A SOD-523 E bp UNIT A b p C D E HE V mm 0.70 0.60 0.4 0.135 1.25 0.85 0.3 0.127 1.15 0.75 1.7 1.5 0.1 ∠ 5O SEMTECH ELECTRONICS LTD. (Sub...