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1SS413 - SILICON EPITAXIAL SCHOTTKY BARRIER DIODE

General Description

Cathode Anode 12 Q Top View Marking Code: "Q" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Peak Forward Current Average Forward Current Surge Current (10 ms) Power Dissipation Junction Temperature Storage Temperature S

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Datasheet Details

Part number 1SS413
Manufacturer SEMTECH
File Size 130.70 KB
Description SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
Datasheet download datasheet 1SS413 Datasheet

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1SS413 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE for high speed switching application PINNING PIN 1 2 DESCRIPTION Cathode Anode 12 Q Top View Marking Code: "Q" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Peak Forward Current Average Forward Current Surge Current (10 ms) Power Dissipation Junction Temperature Storage Temperature Symbol VRM VR IFM IO IFSM Ptot TJ Ts Value 25 20 100 50 1 100 125 - 55 to + 125 Unit V V mA mA A mW OC OC Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 50 mA Reverse Current at VR = 20 V Total Capacitance at VR = 0 V, f = 1 MHz Symbol VF IR CT Typ. - 3.9 Max. 0.55 0.5 - Unit V µA pF SEMTECH ELECTRONICS LTD.